Ordering information note 4 device packaging shipping. H5n3011p silicon n channel mos fet high speed power switching rej03g03850200 rev. Typical characteristics forward current derating curve ambient temperature c forward current a forward characteristics forward voltage v forward current a nonrepetitive surge current number of cycles at 60hz forward surge current a pk. Not 1 new o and then list load stop to save run e dim r for sss. Toshiba field effect transistor silicon n channel mos type. View 1n4001 thru 1n4007 datasheet from vishay semiconductor diodes division at digikey. A listing of on semiconductors productpatent coverage may be accessed at. You can use all semiconductor datasheet in alldatasheet, by no fee and no register. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. Specifications may change in any manner without notice. Get control of your communication and control applications. This datasheet contains preliminary data, and supplementary data will be published at a later date. Plastic silicon rectifiervoltage 50 to volts current 1. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product.
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Mosvi 2sk3569 switching regulator applications low drainsource on resistance. General purpose plastic rectifier 1n4001 thru 1n4007 vishay. This data sheet provides information on subminiature size, axial lead mounted. Toshiba field effect transistor silicon nchannel mos type.
This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007. Datasheet contains the design specifications for product development. The datasheet is printed for reference information only. The switching system is distinguished by its high reliability.
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